000 | 00831nam a2200229zi 4500 | ||
---|---|---|---|
005 | 20220224111621.0 | ||
008 | 110812s2010 enka 000 0 eng | ||
020 | _a9781848211803 | ||
035 | _aMX001001269750 | ||
040 |
_aDLC _bspa _cDLC _dDLC _dUNAMX |
||
050 | 0 | 0 |
_aTK7871.99M44 _bN36 |
082 | 0 | 0 |
_a621.39/732 _222 |
245 | 0 | 0 |
_aNanoscale CMOS : _binnovative materials, modeling, and characterization / _cedited by Francis Balestra |
264 | 1 |
_aLondon, United Kingdom : _bISTE : _aHoboken, New Jersey : _bWiley, _c2010 |
|
300 |
_axix, 652 páginas : _bilustraciones |
||
650 | 0 |
_aSemiconductores complementarios de óxido metálico _xMateriales |
|
700 | 1 |
_aBalestra, Francis, _eeditor |
|
336 |
_atexto _2rdacontent |
||
337 |
_asin medio _2rdamedia |
||
338 |
_avolumen _2rdacarrier |
||
999 |
_c8185 _d8185 |